Joo Sun Choi, Samsung’s executive vice president for Memory Sales and Marketing says:
“We are pleased that volume production of our high-speed, low-power 128GB TSV DRAM module will enable our global IT customers and partners to launch a new generation of enterprise solutions”.
The 128 GB DDR4 DRAM is is made by 144 DDR4 chips.This RAM has an arrangement of Thirty-six 4 GB DRAM package which contains four 20nm based 8GB chips. This new chip has been designed to allow for better signal transmission as compared to other traditional ones.
It has 4GB master chips embedded for data buffer function.power consumption will be reduced by 50% and which provide the speed of up to 2,400 Mbps.DRAM chips, higher performance modules with 3,200 Mbps and 2,667 Mbps speed by produce 20nm 8GB will be available soon.
Samsung has proved themselves in making this new module of 128 GB DDR4 through TSV.This module is designed for Enterprise Servers and I believe soon it will be in the home personal computer’s.